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Sub-100 nm Channel Length Organic Field Effect Transistor Fabricated by Wafer-Scale Nanoimprint Lithography Rutilius Taurus Aemilianus Gefährlich wird es

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Gefährlich wird es

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Sub-100 nm Channel Length Organic Field Effect Transistor Fabricated by Wafer-Scale Nanoimprint Lithography Rutilius Taurus Aemilianus Gefährlich wird esThis thesis was performed between October 2010 and October 2013 at the Institute of Semiconductors and Microsystems (IHM) of the Technische Universitt Dresden (TU Dresden). The main task of this work was fabrication of short channel Organic Field Effect Transistors (OFET) using Nanoimprint Lithography (NIL). Both the UV based NIL and the thermal based NIL with wafer scale polymer templates were applied to define OFET channel with lengths down to sub

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